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| Eudyna GaN-HEMT 90W Preliminary FEATURES High Voltage Operation : VDS=50V High Gain: 15dB(typ.) at Pout=42dBm(Avg.) High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability EGN21A090IV High Voltage - High Power GaN-HEMT DESCRIPTION The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3rd Order Inter modulation Distortion Power Gain Drain Efficiency Thermal Resistance Vp VGDO IM3 Gp d Rth VDS=50V IDS=36mA IGS= -18 mA VDS=50V IDS(DC)=500mA Pout=42dBm(Avg.) Note 1 Channel to Case -1.0 14.0 - r P Symbol VDS IGF IGR Tch im l e Condition RG=5 RG=5 a in Rating Limit 50 <19.4 >-7.2 200 120 -5 160 -65 to +175 250 y r Unit V V W oC oC Unit V mA mA oC Limit Typ. Max. -2.0 -350 -32 15.0 35 1.2 -3.5 1.4 Unit V V dBc dB % oC/W Note 1 : IM3 and Gain test condition as follows: IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured over 3.84MHz at fo-10MHz and fI+10MHz. Edition 1.0 May 2005 1 EGN21A090IV High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V, IDS=500mA 50 48 Output Power [dBm] Output Power [dBm] 46 44 42 40 38 36 2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24 Frequency [GHz] Pin=22dBm Pin=28dBm Pin=34dBm Pin=24dBm Pin=30dBm Pin=36dBm Output Power and Drain Efficiency vs. Input Power VDS=50V, IDS=500mA, f=2.14GHz 52 50 48 46 44 42 40 38 36 34 32 Output Power 100 90 Drain Efficiency [%] 80 70 60 2-tone IMD vs. Output Power VDS=50V, f1=2.135GHz, f2=2.145GHz, 10MHz Spacing -20 -25 -30 IM3 [dBc] -35 -40 -45 -50 26 28 30 32 34 36 38 40 42 44 46 48 Output Power(average) [dBm] 250mA 500mA 750mA 1000mA r P im l e Pin=26dBm Pin=32dBm IMD [dBc] a in -20 -25 -30 -35 -40 -45 -50 -55 0.1 y r 50 Drain Effi. 40 30 20 10 0 16 18 20 22 24 26 28 30 32 34 36 38 40 Input Power [dBm] 2-tone IMD vs. Tone Spacing, VDS=50V, IDS=500mA Pout=42dBm(average) Center Frequency=2.14GHz IM3 lower IM5 lower IM7 lower IM3 upper IM5 upper IM7 upper 1.0 2-tone Spacing [MHz] 10 2 EGN21A090IV High Voltage - High Power GaN-HEMT 2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power VDS=50V, IDS=500mA, f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = 8.5dB@0.01% Probability(CCDF) -10 -15 -20 -25 IMD [dBc] -30 -35 -40 -45 -50 -55 -60 28 30 Power Gain IM3 IM5 Drain Effi. 50 45 40 35 30 25 20 15 10 5 0 46 Drain Efficiency [%], Power Gain [dB] -15 -20 ACLR(5MHz offset) [dBc] -25 -30 -35 -40 -45 -50 -55 -60 30 32 34 ACLR DPD-OFF 40 35 Power Gain 30 25 20 15 ACLR DPD-ON 10 5 0 Drain Efficiency [%], Power Gain [dB] r P im l e 32 34 36 38 45 a in IM7 40 42 44 y r Output Power [dBm] Drain Effi. 2-Carrier ACLR, Drain Efficiency and Power Gain vs. Output Power with DPD Operation (note VDS=50V, IDS=500mA f1=2.1375GHz, f2=2.1425GHz(5MHz Spacing) Peak/Avg. = 6.5dB@0.01% Probability(CCDF); Single Carrier Signal Note) Digital Predistortion evaluation test system: PMC-Sierra PALADIN-15 DPD chip-set 2-carrier Spectrum with DPD Operation Pave=42dBm 10dB/div DPD-OFF 36 38 40 42 44 46 DPD-ON Output Power [dBm] Center Frequency=2.14GHz 5MHz/div 3 EGN21A090IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=500mA, f=1 to 3 GHz, Zl = Zs = 50 ohm +50j +25j 2.2 +100j +10j 2.1 2.0GHz 2.0GHz 2.1 2.2 +250j 0 -10j 10 50 25 -250j -25j -100j -50j 180 10 Scale for |S21| r P +90 2.2 2.2 2.1 2.0GHz 2.1 2.0GHz im l e S22 S11 0 Freq [GHz] 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 a in S11 MAG 0.939 0.944 0.938 0.932 0.921 0.905 0.888 0.853 0.800 0.707 0.573 0.415 0.400 0.386 0.373 0.361 0.353 0.343 0.339 0.335 0.337 0.341 0.604 0.843 0.901 0.915 0.912 0.916 0.907 0.901 ANG 167.7 165.7 163.8 161.9 159.4 156.3 152.8 149.1 145.1 140.5 138.0 144.1 145.8 147.9 150.2 153.1 156.1 159.3 163.0 167.3 171.6 176.1 -163.9 -177.7 170.6 163.1 156.9 150.7 144.2 138.0 S21 MAG ANG 0.960 -10.5 0.927 -15.6 0.927 -20.8 0.966 -26.4 1.034 -32.6 1.149 -39.6 1.333 -48.4 1.614 -58.9 2.025 -72.0 2.649 -89.3 3.506 -111.5 4.661 -140.3 4.792 -143.4 4.921 -146.8 5.043 -150.2 5.178 -153.7 5.327 -157.4 5.452 -160.9 5.598 -164.8 5.741 -168.9 5.888 -173.0 6.022 -177.4 6.500 132.8 4.706 85.1 2.943 54.4 1.950 35.3 1.399 21.7 1.068 10.2 0.852 0.4 0.717 -8.2 y r S12 MAG ANG 0.002 -36.3 0.002 -30.4 0.001 -27.5 0.002 -18.0 0.002 -15.1 0.003 -12.9 0.003 -11.3 0.004 -12.9 0.006 -22.3 0.009 -35.9 0.013 -55.8 0.020 -82.5 0.020 -85.4 0.021 -88.5 0.022 -92.1 0.022 -95.9 0.023 -98.7 0.024 -102.9 0.025 -106.1 0.026 -110.2 0.026 -114.2 0.027 -118.8 0.032 -167.5 0.025 147.6 0.017 118.4 0.013 100.5 0.010 84.4 0.008 74.9 0.007 70.5 0.006 72.0 S22 MAG ANG 0.910 -175.8 0.915 -177.3 0.915 -178.8 0.915 179.9 0.911 178.3 0.907 177.2 0.900 175.7 0.898 174.2 0.892 172.7 0.889 171.0 0.895 167.8 0.887 159.6 0.881 158.4 0.877 157.2 0.871 155.7 0.863 154.3 0.854 152.7 0.844 151.0 0.830 149.3 0.810 147.2 0.792 145.2 0.769 143.2 0.321 126.1 0.345 -138.6 0.646 -146.8 0.781 -155.9 0.848 -162.4 0.884 -167.2 0.903 -170.3 0.910 -173.4 S12 0.1 Scale for |S 12| -90 S21 4 |
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